by251p thru by255p document number 88838 15-sep-05 vishay general semiconductor www.vishay.com 1 do-201ad general purpose plastic rectifier major ratings and characteristics i f(av) 3.0 a v rrm 200 v to 1300 v i fsm 150 a i r 5.0 a v f 1.1 v t j max. 150 c features low forward voltage drop low leakage current, i r less than 0.1 a high forward surge capability solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application. (note: these devices are not q101 qualified. there- fore, the devices specified in this datasheet have not been designed for use in automotive or hi-rel appli- cations.) mechanical data case: do-201ad, molded epoxy body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solderable per j-std-002b and jesd22-b102d polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol by251p by252p by253p by254p by255p unit maximum repetitive peak reverse voltage v rrm 200 400 600 800 1300 v maximum rms voltage v rms 140 280 420 560 910 v maximum dc blocking voltage v dc 200 400 600 800 1300 v maximum average forward rectified current 10 mm lead length i f(av) 3.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 150 a maximum full load reverse curr ent, full cycle average 10 mm lead length i r(av) 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88838 15-sep-05 by251p thru by255p vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol by251p by252p by253p by254p by255p unit maximum instantaneous forward voltage at 3.0 a v f 1.1 v maximum reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a typical reverse recovery time i f = 0.5 a, i r = 1.0 v, i rr = 0.25 a t rr 3.0 s typical junction capacitance at 4.0 v, 1 mhz c j 40 pf parameter symbol by251p by252p by253p by254p by255p unit typical thermal resistance (1) r ja r jl 20 10 c/w figure 1. forward current derating curve a v erage for w ard rectified c u rrent (a) am b ient temperat u re (c) 60 hz resisti v e or ind u cti v e load 10 mm lead length 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 figure 2. maximum non-repetitive peak forward surge current peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60hz 8 .3 ms single half sine/ w a v e t a = 55 c 1 10 100 200 100 0
by251p thru by255p document number 88838 15-sep-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. maximum non-repetitiv e peak forward surge current figure 4. typical instantaneous forward characteristics 0 20 40 60 8 0 100 0.01 0.1 1 10 instantaneo u sre v erse leakage c u rrent(a) percent of rated peak re v erse v oltage (%) t j = 125 c t j = 75 c t j = 25 c 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 10 100 1 0.1 instantaneo u sfor w ard c u rrent (a) instantaneo u sfor w ard v oltage ( v ) t j = 25 c p u lse w idth = 300 s 1% d u ty cycle figure 5. typical junction capacitance 1 10 100 10 100 j u nction capacitance (pf) re v erse v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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